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Manufacturer: ON Semiconductor
Description: MOSFET N-Channel 650V 190MOHM TO220 I
Package: TO-220-3
Quantity Available: Over 265,000 pieces
Best price for FCP190N65S3R0 (Email: [email protected])
Product Parameters
- Manufacturer Part Number : FCP190N65S3R0
- Manufacturer : ON Semiconductor
- Description : MOSFET N-Channel 650V 190MOHM TO220 I
- Packaging : -
- Series : SuperFET? III
- Part Status : Active
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 650V
- Current - Continuous Drain (Id) @ 25°C : 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Vgs(th) (Max) @ Id : 4.5V @ 1.7mA
- Gate Charge (Qg) (Max) @ Vgs : 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds : 1350pF @ 400V
- Vgs (Max) : ±30V
- FET Feature : -
- Power Dissipation (Max) : 144W (Tc)
- Rds On (Max) @ Id, Vgs : 190 mOhm @ 8.5A, 10V
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220-3
- Package / Case : TO-220-3
- Other Part Number : FCP190N65S3R0-ND
- Delivery Time : Ship within 1 day.
- Manufacturer Production time : 6-8 weeks
- Weight : 0.001KG
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